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Results 1 to 25 of 721

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A SIMPLE U.H.F. TRANSISTOR MODEL.STEWART RD; KASIM TA.1978; INTERNATION. J. ELECTR. ENGNG EDUC.; GBR; DA. 1978; VOL. 15; NO 4; PP. 327-340; ABS. FRE/GER/SPA; BIBL. 6 REF.Article

GENERALIZED LEAST PTH OPTIMIZATION IN THE MODELING OF MICROWAVE TRANSISTORS.JANSEN RH; KOSTER N.1977; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1977; VOL. 31; NO 11; PP. 475-477; ABS. ALLEM.; BIBL. 10 REF.Article

TRANSISTORS HYPERFREQUENCES A HAUTE FIABILITE1980; INTER ELECTRON.; FRA; DA. 1980; NO 305; PP. 17-19; (2 P.)Article

EXPERIMENTAL MEASUREMENT OF MICROSTRIP TRANSISTOR-PACKAGE PARASITIC REACTANCES.AKELLO RJ; EASTER B; STEPHENSON IM et al.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 5; PP. 367-372; BIBL. 12 REF.Article

HIGH-FREQUENCY TRANSISTOR MODELING FOR CIRCUIT SIMULATIONGOUGH RG.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 666-670; BIBL. 3 REF.Article

ELECTRON-BEAM FABRICATION OF SUBMICROMETER BIPOLAR TRANSISTORS FOR HIGH-FREQUENCY LOW-CURRENT OPERATIONGREENEICH EW; TOLLIVER DL; GONZALES AJ et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1346-1354; BIBL. 18 REF.Article

ELECTRONICALLY COLD MICROWAVE ARTIFICIAL RESISTORSFORWARD RL; CISCO TC.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 45-50; BIBL. 12 REF.Article

AUGMENTATION DE LA PUISSANCE DE SORTIE DES TRANSISTORS GENERATEURS MICROONDES PREVUS POUR FONCTIONNER DANS UNE LARGE GAMME DE FREQUENCESDIKOVSKIJ VI; EVSTIGNEEV AS.1982; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 12; PP. 2408-2414; BIBL. 2 REF.Article

SIMPLE S-PARAMETER MEASUREMENT OF BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 6; PP. 18-20; BIBL. 4 REF.Article

MESSUNG DER S-PARAMETER VON MIKROWELLENTRANSISTOREN IN STREIFENLEITER-GEHAEUSEAUS-FUEHRUNG = MESURE DES PARAMETRES S DES TRANSISTORS A MICRO-ONDES EN MONTAGE MICROSTRIBENEDIX A.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 3; PP. 116-119; BIBL. 8 REF.Article

NEUE TECHNIKEN BEI HABBLEITERN FUER DIE NACHRICHTENTECHNIK = NOUVELLES TECHNIQUES DANS LE CAS DES SEMICONDUCTEURS POUR LA TECHNIQUE DES TELECOMMUNICATIONSPLATH D.1978; NACHR. ELEKTRON.; DEU; DA. 1978; VOL. 32; NO 10; PP. 326-328; ABS. ENGArticle

SILICON MICROWAVE TRANSISTOR WITH 2DB NOISE FIGURE AT 4 GHZ.MATSUMOTO M; ISHII K; ITOH M et al.1977; FUJITSU SCI. TECH J.; JAP.; DA. 1977; VOL. 13; NO 4; PP. 53-67; BIBL. 8 REF.Article

A TWO-LAYER MICROWAVE FET STRUCTURE FOR IMPROVED CHARACTERISTICS.DAS MB; ESQUEDA P.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 757-761; BIBL. 10 REF.Article

3-GHZ 15-W SILICON BIPOLAR TRANSISTORSUCHIZAKI I; HORI S; ODA Y et al.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 12; PP. 1038-1042; BIBL. 5 REF.Conference Paper

BERECHNUNG DER ELEMENTE DES ERSATZSCHALTBILDES VON MIKROWELLEN-BIPOLAR-TRANSISTOREN MIT NUMERISCHER OPTIMIERUNG = CALCUL PAR OPTIMALISATION NUMERIQUE DES CIRCUITS EQUIVALENTS DE TRANSISTORS BIPOLAIRES POUR MICRO-ONDESBENEDIX A.1980; NACHRICHTENTECH., ELEKTRON.; ISSN 0323-4657; DDR; DA. 1980; VOL. 30; NO 10; PP. 431-435; BIBL. 14 REF.Article

APPLICATION D'UN PROCEDE AUTOALIGNE SUBMICRONIQUE A LA REALISATION D'UN TRANSISTOR BIPOLAIRE D'EMISSION EN BANDE HBONIS M; PARIS P; GIMINE G et al.1979; ; FRA; DA. 1979; DGRST-77 7 0996; (4)-39 P.: ILL.; 30 CM; BIBL. 18 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

GAAS MICROWAVE MOSFET'SMIMURA T; ODANI K; YOKOYAMA N et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 573-579; BIBL. 16 REF.Article

ETUDE DE L'AUGMENTATION DE LA CONCENTRATION DE LA BASE D'UN TRANSISTOR BIPOLAIRE PAR DIFFUSION ASSISTEE.FOURRIER JY; TRUCHE R; GAILLIARD JP et al.1978; DGRST-7670663; FR.; DA. 1978; PP. 1-42; BIBL. 11 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

"SMART" BIAS SUPPLY FOR DELICATE MW TRANSISTORSLANE D.1978; MICROWAVE J.; USA; DA. 1978; VOL. 21; NO 6; PP. 126-142Article

DESIGN AND MANUFACTURE OF A MICROWAVE LOW-NOISE TRANSISTOR HAVING BEAM-LEADS.PESTIE JP; FOURRIER JY.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 2; PP. 73-79; BIBL. 10 REF.Article

MICROWAVE SILICON POWER TRANSISTOR.ISHIKAWA H; HIDAKA N; ODANI K et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 3; PP. 73-86; BIBL. 8 REF.Article

MICROWAVE SWITCHING WITH GAAS FETS: DEVICE AND CIRCUIT DESIGN THEORY AND APPLICATIONSAYASLI Y.1982; MICROWAVE JOURNAL; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 11; PP. 61-74; 10 P.; BIBL. 10 REF.Article

ETAT ACTUEL ET PROBLEMES FONDAMENTAUX RELATIFS A L'ELABORATION DE TRANSISTORS MICROONDES. (REVUE)MURAV'EV VV; NAUMOVICH NM.1982; IZV. VYSS. UCEBN. ZAVED., RADIOELECTRON.; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 10; PP. 42-56; BIBL. 67 REF.Article

OPTIMUM LOAD ADMITTANCE FOR A MICROWAVE POWER TRANSISTORTUCKER RS.1980; PROC. I.E.E.E.; USA; DA. 1980; VOL. 68; NO 3; PP. 410-411; BIBL. 5 REF.Article

SILICON BIPOLAR MICROWAVE POWER TRANSISTORSALLISON R.1979; I.E.E.E. TRANS. MICROWAVE. THEORY. TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 415-422; BIBL. 33 REF.Article

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